Name:Dr. Sankar
Designation :Professor of Physics
Qualification:M.Sc Ph.D
Email id:This email address is being protected from spambots. You need JavaScript enabled to view it.
Area of Specialisation:Solid State Physics
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Publications
International Journals :
1. M. Rajasekaran, S. Sankar, P. C. Baynes and V. Devanathan Inelastic electron tunneling through optical barriers Physical Review B, vol. 28 (1983) pp.4810-14.
2. M. Dakshinamoorthy, K. Iyakutti, S. Sankar and R. Asokamani
Bandstructure, Fermi surface and superconductivity of Pr under high pressure.
Z. Phys. B: Cond. Matter, vol. 55 (1984) pp. 2993- 3001.
3. S. Sankar and K. Iyakutti Positron lifetime at the vacancy-impurity centres in aluminium Positron Annihilation (Eds. P. C. Jain, R. M. Singru and K. P. Gopinathan, 1985,World Scientific, Singapore) pp. 540-1.
4. S. Sankar, K. Iyakutti and M. Dakshinamoorthy The electronic bandstructure and Fermi surface of ytterbium under high pressure High Temperatures High Pressures, vol. 18 (1986) pp. 359 – 64.
5. K. Iyakutti, M. Dakshinamoorthy and S. Sankar
High Temperatures High Pressures, vol. 18 (1986) pp.371-5.
6. S. Sankar and K. Iyakutti
Ground states of light impurities in metals
Hyperfine Interactions, vol. 35 (1987) pp. 697- 700.
7. S. Sankar, K. Iyakutti and M. Dakshinamoorthy
On the high pressure electronic phase transition in praseodymium (PrIII -> PrIV)
High Temperatures High Pressures, vol. 19 (1988) pp. 469- 75.
8. K. Iyakutti, S. Sankar and M. Thiagarajan
Electronic structure of helium trapped vacancy in aluminium using multiple scattering MSXa method
Int. J. Quantum Chemistry, vol. XXXV (1989) pp. 228-35.
9. S. Sankar, M. Dakshinamoorthy and K. Iyakutti
Effect of high pressure on the Debye temperature and the electron-phonon mass enhancement factor of Pr
High Temperatures High Pressures, vol. 26 (1994) pp. 515-519.
10. S. Sankar and K. Chitra
A screening based study of impurity-dynamics in metals
Bulletin of Materials Science, vol. 21 (1997) pp. 1-4.
11. V. Subramanian, K. Chitra, K. Venkatesh, S. Sankar and T. Ramasamy
Comparative study on the vibrational spectra of cytosine and thiocytosine by various semi-empirical quantum mechanical methods
Chem. Phys. Letters, vol. 264 (1997) pp. 92-100.
12. V. Subramanian, K. Chitra, D. Sivanesan, M. Renuka, S. Sankar and T. Ramasamy
Comparison of conventional ab-initio and density functional methods for the ArHf interaction potential
J. Mol. Struc. (Theochem.), vol. 431 (1998) pp.181-4.
13. V. Subramanian, K. Chitra, D. Sivanesan, R. Amudha and S. Sankar
Ab initio potential energy surface of the Ne---CO complexes
Chem. Phys. Lett., vol. 307 (1999) pp. 493-7.
14. S. Sankar
Statistical characteristics and energetics of the generalized macroscopic superposition states.
Asian J. Phys., vol. 9 (2000) pp.430-34.
15. K. Sivaji, A. Arulchakkaravarthy, S. Selvakumar, P. Ramasamy, S. Sankar, Babu Vergese
Electron Momentum Distribution Of Trans-Stilbene By Positron Annihilation
Chemical Physics.Letters, 412 (2005) 327-330
16. S. Selvakumar, K. Sivaji, A. Arulchakaravarthy, N. Balamurugan, S. Sankar, P. Ramasamy
Growth Of High Quality Naphthalene Single Crystals Using Selective Self – Seeding Vertical Bridgman Technique (Ssvbt) And Its Characterization
J.Cryst.Growth, 282 (2005) 370-376.
17. S. Selvakumar, K. Sivaji, N. Balamurugan, A. Arulchakkaravarthy, S. Sankar,
C. Venkateshwaran, P. Ramasamy
Growth And Studies On SSVBT Grown P-Terphenyl Single Crystals
J. Cryst. Growth, 275 (2005) e265-e271.
18. S. Selvakumar, K. Sivaji, A. Arulchakkaravarthi, S. Sankar.
Enhanced Fluorescence and Time Resolved Fluorescence properties of p-terphenyl crystal grown by selective self-seeded vertical Bridgman Technique.
Materials Letters 61 (2007) 471.
19. K. Sivaji, A. Arulchakkaravarthi, S. Selvakumar, S. Sankar
Phase transition studies in trans-stilbene crystals using 2D-ACAR.
Physica Status Solidi (c) 4 (2007) 3871.
20. S. Selvakumar, A. Arulchakkaravarthi, R. Kumar, S. Muralithar, S. Sankar, K. Sivaji.
Enhanced energy resolution (22Na, 137Cs and 241Am) and Alpha-Gamma
(241Am + 60Co) and Neutron–Gamma (241Am-Be) Pulse Shape Discrimination properties of p-terphenyl crystals prepared by modified selective self-seeded vertical Bridgman technique (SSVBT).
Solid State Communications 145 (2008) 482.
21. M.K. Shobana, S. Sankar, V. Rajendran
Structural and Thermal Studies of Ni0.25Ni0.75Fe2O4 Compositesby Sol-Gel Combustion Method
Journal of Alloys and Compounds 479 (2009) 421-424.
22. M.K. Shobana, S. Sankar
Characterization of Sol-Gel Prepared Nanoferrites
Journal of Magnetism and Magnetic Materials 321 (2009) 599-601
23. M.K. Shobana, S. Sankar
Structural, Thermal and Magnetic Properties of Ni1-xMnxFe2O4 Nanoferrites
Journal of Magnetism and Magnetic Materials 321 (2009) 2125-2128
24. M.K. Shobana, S. Sankar, V. Rajendran
Characterization of Co0.5Mn0.5Fe2O4
Materials Chemistry and Physics 113 (2009) 10-13
25. S. Chellammal, S. Sankar, R. Murugaraj, S. Selvakumar, E. Viswanathan, K. Sivaji
Structural and electrical conductivity studies on undoped and copper-doped nanocrystalline zinc sulphide
Journal of Material science 45 (2010) 1242-1247
26. S. Chellammal, S. Sankar, S. Selvakumar, E. Viswanathan, R. Murugaraj, K. Sivaji
Structural and electrical conductivity studies on undoped and copper-doped nanocrystalline zinc sulphide
Journal of Material science 45 (2010) 6701-6706.
27. S. Chellammal, S. Sankar, R. Murugaraj, S. Selvakumar, E. Viswanathan, K. Sivaji
Energy gap studies of ZnS nanocrystallites
Journal of Material science in Semiconductor Processing 15 (2010) 314-317.
28. E. Viswanathan, R. Murugaraj, S. Sankar, A. Arulchakkaravarthi, D. Kanjilal, and K. Sivaji
Low temperature dielectric study on swift heavy ion irradiated 6H-SiC crystals
Indian Institute of Metals, 2011
29. E. Viswanathan, R. Murugaraj, S. Selvakumar, S. Sankar, D. Kanjilal, and K. Sivaji
Low temperature relaxation properties of SHI irradiated N-doped 6H-SiC
AIP Conf. Proc. 1447 (2012) 927
30. P. Vasudevan, S. Sankar, and S. Gokulraj
Growth, Structural, Mechanical, Etching and Dielectric Properties of L-Mehionine L-Methioninium Hydrogen Maleate Single Crystal
Optoelectronics and Advanced Materials-Rapid Communications 6 (2012) 1107-1112
31. P. Vasudevan, S. Sankar, and D. Jayaraman
Synthesis, Optical and Electrical Studies of Nonlinear Optical Crystal: L-arginine Semi-oxalate
Bulletin of Korean Chemical Society 33 (2013) pp. 128-132
32. P. Vasudevan, S. Gokulraj, and S. Sankar
Synthesis and Characterization of Nonlinear Optical L-Arginine Semi-Oxalate Single Crystal
Spectrochimica Acta Part-A: Molecular and Biomolecular Spectroscopy 106 (2013) 210-215.
33. P. Vasudevan, S. Sankar, and S. Gokulraj
Optical and Dielectric Properties of L-Methionine L-Methioninium Hydrogen Maleate Single Crystal
AIP Conf. Proc. 1512 (2013) 866
II. International Conferences / Symposia / Reports :
1. S. Sankar, K. Iyakutti and M. Dakshinamoorthy
Pressure induced s -> d transition in Yb
Proc. Int. Symp. of Current Trends in Physics of Materials (5-7 Nov.,1986, IIT Kanpur, India) (Ed. M. Youssouff, World Scientific, Singapore) pp. 51-3, 1987.
2. S. Sankar and K. Iyakutti
On the positron-trapping states of metal monovacancies
ICTP Internal Report (Trieste, Italy) No. IC/87/192, 1987.
3. K. Iyakutti, S. Sankar and M. Dakshinamoorthy
Valence change in praseodymium (Pr) and ytterbium (Yb) under high pressure
Proc. V-th Int. Conf. on Valence Fluctuations (Plenum, New York) pp.189-90, 1987.
4. Rajagopalan and S. Sankar
Electronic and structural properties of ordered LiAl compounds under normal and high pressure.
Proc. Int. Conf. High Press. Sci. & Tech. (AIRAPT-17, Honolulu, USA, July 25-30) pp. 315-317, 1999.
5. K. Sivaji, S. Sankar, P. Jayavel and V. Ravichandran
2D-ACAR studies of high energy Si-implanted GaAs
Proc. Int. Workshop on Prep. & Charact. of Tech. Imp. Single Crystals (Nat. Phys. Lab., New Delhi, Feb. 26- 28, 2001, (Eds.) S. K. Gupta, S.K. Halder and G. Bhagavanarayana) pp. 367-371, 2001.
6. K. Sivaji, R. Rajaraman, Padma Gopalan, S. Sankar and V. Ravichandran
2D-ACAR studies of porous silicon
Proc. Int. Workshop on Prep. & Charact. of Tech. Imp. Single Crystals (Nat. Phys. Lab., New Delhi, Feb. 26- 28, 2001, (Eds.) S. K. Gupta, S.K. Halder and G. Bhagavanarayana) pp. 372-376, 2001.
7. S. Selvakumar, K. Sivaji, N.Balamurugan, A. Arulchakaravarthy, S. Sankar, C. Venkateswaran and P. Ramasamy
Growth and Studies on SSVBT Grown P-Terphenyl Single Crystals
International Conference on Crystal Growth, ICCG-14-2004.
8. K. Sivaji, C.S. Sundar, R. Rajaraman, G. Padma Gopalan, S. Sankar, and V. Ravichandran
2D-ACAR Studies on Microstructure Characteristics of Porous Silicon
9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP IX), MASPEC, Italy-September 2001.
9. K. Sivaji, C.S. Sundar, G. Amarendra, S. Sankar, P. Jayavel and V. Ravichandran
2D-ACAR Studies on High Energy Swift Heavy Ion Implanted GaAs
9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP IX), MASPEC, Italy-September 2001.
10. K. Sivaji, S. Sankar, P. Jayavel and V. Ravichandran
2D-ACAR Studies of High Energy Si-implanted GaAs.
Crystal Growth and Characterization,pp 367, 2000.
Ed. S.K. Gupta, S.K. Halder, G. Bhagavannarayana, NPL, New Delhi
“International Workshop on Preparation and Characterization of Single Crystals”, NPL, New Delhi, Dec. 2000.
11. K. Sivaji, R. Rajaraman, G. Padma Gopalan, S. Sankar, and V. Ravichandran
2D-ACAR Studies of Porous Silicon
Crystal Growth and Characterization,pp 372, 2000
Ed. S.K. Gupta, S.K. Halder, G. Bhagavannarayana, NPL, New Delhi
“International Workshop on Preparation and Characterization of Single Crystals”, NPL,New Delhi, Dec. 2000.
I. International Conferences / Symposia :
1. S. Sankar, K. Iyakutti and M. Dakshinamoorthy
Pressure induced s -> d transition in Yb
Proc. Int. Symp. of Current Trends in Physics of Materials (5-7 Nov.,1986, IIT Kanpur, India) (Ed. M. Youssouff, World Scientific, Singapore) pp. 51-3, 1987.
2. S. Sankar and K. Iyakutti
On the positron-trapping states of metal monovacancies
ICTP Internal Report (Trieste, Italy) No. IC/87/192, 1987.
3. K. Iyakutti, S. Sankar and M. Dakshinamoorthy
Valence change in praseodymium (Pr) and ytterbium (Yb) under high pressure
Proc. V-th Int. Conf. on Valence Fluctuations (Plenum, New York) pp.189-90, 1987.
4. Rajagopalan and S. Sankar
Electronic and structural properties of ordered LiAl compounds under normal and high pressure.
Proc. Int. Conf. High Press. Sci. & Tech. (AIRAPT-17, Honolulu, USA, July 25-30) pp. 315-317, 1999.
5. K. Sivaji, S. Sankar, P. Jayavel and V. Ravichandran
2D-ACAR studies of high energy Si-implanted GaAs
Proc. Int. Workshop on Prep. & Charact. of Tech. Imp. Single Crystals (Nat. Phys. Lab., New Delhi, Feb. 26- 28, 2001, (Eds.) S. K. Gupta, S.K. Halder and G. Bhagavanarayana) pp. 367-371, 2001.
6. K. Sivaji, R. Rajaraman, Padma Gopalan, S. Sankar and V. Ravichandran
2D-ACAR studies of porous silicon
Proc. Int. Workshop on Prep. & Charact. of Tech. Imp. Single Crystals (Nat. Phys. Lab., New Delhi, Feb. 26- 28, 2001, (Eds.) S. K. Gupta, S.K. Halder and G. Bhagavanarayana) pp. 372-376, 2001.
7. S. Selvakumar, K. Sivaji, N.Balamurugan, A. Arulchakaravarthy, S. Sankar, C. Venkateswaran and P. Ramasamy
Growth and Studies on SSVBT Grown P-Terphenyl Single Crystals
International Conference on Crystal Growth, ICCG-14-2004.
8. K. Sivaji, C.S. Sundar, R. Rajaraman, G. Padma Gopalan, S. Sankar, and V. Ravichandran
2D-ACAR Studies on Microstructure Characteristics of Porous Silicon
9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP IX), MASPEC, Italy-September 2001.
9. K. Sivaji, C.S. Sundar, G. Amarendra, S. Sankar, P. Jayavel and V. Ravichandran
2D-ACAR Studies on High Energy Swift Heavy Ion Implanted GaAs
9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP IX), MASPEC, Italy-September 2001.
10. K. Sivaji, S. Sankar, P. Jayavel and V. Ravichandran
2D-ACAR Studies of High Energy Si-implanted GaAs.
Crystal Growth and Characterization,pp 367, 2000.
Ed. S.K. Gupta, S.K. Halder, G. Bhagavannarayana, NPL, New Delhi
“International Workshop on Preparation and Characterization of Single Crystals”, NPL, New Delhi, Dec. 2000.
11. K. Sivaji, R. Rajaraman, G. Padma Gopalan, S. Sankar, and V. Ravichandran
2D-ACAR Studies of Porous Silicon
Crystal Growth and Characterization,pp 372, 2000
Ed. S.K. Gupta, S.K. Halder, G. Bhagavannarayana, NPL, New Delhi
“International Workshop on Preparation and Characterization of Single Crystals”, NPL,New Delhi, Dec. 2000.
II. National Conferences / Symposia :
1. M. Rajasekaran, S. Sankar and V. Devanathan
Inelastic electron tunneling
Nuclear Physics & Solid State Physics (India), vol. 24C, pp. 583-4, 1981.
2. S. Sankar and K. Iyakutti
Electronic structure of InP using the multiple scattering Xa (MSXa) method
Nuclear Physics & Solid State Physics (India), vol. 25C, pp. 396-7, 1987.
3. S. Sankar and K. Iyakutti
Electronic structure of helium trapped in an aluminium vacancy
Nuclear Physics & Solid State Physics (India), vol. 26C, pp.547, 1983.
4. S. Sankar, M. Dakshinamoorthy and K. Iyakutti
Bandstructure studies of ytterbium under high pressure
Nuclear Physics & Solid State Physics (India), vol. 27C‚ pp. 34, 1984.
5. S. Sankar, M. Dakshinamoorthy and K. Iyakutti
Evidence for high pressure phase transition in Pr (PrIII -> PrIV)
Solid State Physics (India), vol. 28C‚ pp.116, 1985.
6. K. Iyakutti, M. Dakshinamoorthy and S. Sankar
Investigation of lattice relaxation in aluminium and copper monovacancies through binding energy and lifetime of positron
Solid State Physics (India), vol. 28C‚ pp. 122, 1985.
7. S. Sankar, K. Iyakutti and M. Dakshinamoorthy
Pressure induced s -> d transition in Pr
Solid State Physics (India), vol. 29C‚ pp. 114, 1986.
8. S. Sankar
High pressure bandstructures and electronic properties of the rare earths Pr and Yb
Solid State Physics (India), vol. 29A‚ (Invited Talks), pp. 224, 1986.
9. K. Ramani, S. Sankar and M. Dakshinamoorthy
Electron-positron correlation energies in metal vacancies
Solid State Physics (India), vol. 29C‚ pp. 67, 1986.
10. S. Sankar and S. Suganthi
Stationary states of a positron in an aluminium vacancy
Solid State Physics (India), vol. 29C, pp. 68, 1986.
11. S. Sankar, K. Iyakutti and M. Dakshinamoorthy
Electronic specific heat of Yb under high pressure
Proc. 3rd National Seminar of Crystal Growth (Ed. P. Ramasamy, Feb. 16-19, Madras, India) pp.109, 1987,.
12. S. Sankar, K. Iyakutti and M. Dakshinamoorthy
On the vacancy binding of light impurities in metals
Solid State Physics (India), vol. 30C , pp. 56, 1987.
13. S. Sankar, M. Dakshinamoorthy and K. Iyakutti
Electron-phonon mass enhancement of Yb and Ac under pressure
Solid State Physics (India), vol. 30C , pp. 143, 1986.
14. K. Iyakutti, S. Sankar and M. Thiagarajan
Nature of hydrogen trapped in an aluminium vacancy
Proc. 7th Science Sammelan (Coimbatore, India) pp. 276, 1988.
15. S. Sankar, P. E. Akilandeswari and K. Iyakutti
On the self-trapping of light impurities in the interstitials in metals
Solid State Physics (India), vol. 31C, pp. 54, 1988.
16. S. Sankar, M. Rose Mary, M. Dakshinamoorthy and K. Iyakutti
On the positron binding in dislocations in metals
Solid State Physics (India), vol. 31C, pp. 69, 1988.
17. S. Sankar, M. Dakshinamoorthy and K. Iyakutti
On the variation of the Debye temperature under pressure
Solid State Physics (India), vol. 32C, pp. 152, 1989.
18. S. Sankar
On the zero-point oscillations in metals
Solid State Physics (India), vol. 32C, pp. 153, 1989.
19. S. Sankar
Study of electron-phonon interaction using screening
Solid State Physics (India), vol. 34C, pp. 158, 1991.
20. S. Sankar and K. Chitra
On the study of local modes of a light impurity in metals
Solid State Physics (India), vol. 35C, pp. 94,1992.
21. S. Sankar and K. Chitra
Hydrogen migration energy in aluminium
Solid State Physics (India), vol. 35C, pp. 97, 1992.
22. S. Sankar, M. Dakshinamoorthy and S. R. Dhanalakshmi
A phenomenological relation between the Debye temperature and the Fermi energy of metals
Solid State Physics (India), vol. 35C, pp.104, 1992.
23. S. Sankar, K. Anuradha and R. Sasikala
Variation of electrical resistivity of copper subjected to linear strain
Solid State Physics (India), vol. 35C, pp. 245, 1992.
24. S. Sankar, M. Dakshinamoorthy and K. Iyakutti
Linear dependence of the Debye temperature on pressure in metals
Solid State Physics (India), vol. 36C, pp. 238, 1993.
25. S. Sankar
On the squeezed components of a coherent state
Proc. DAE BRNS National Laser Symposium (PRL, Ahmedabad),pp.1997.
26. S. Sankar, S. Vijay, R. N. Viswanath and S. Ramasamy
Enhancement of ionic conductivity of Si-irradiated CaF2 single crystal
Solid State Physics (India), vol. 40C, pp. 268, 1997.
27. S. Sankar
Energetics of squeezed components of a coherent state
Proc. DAE BRNS National Laser Symposium (IIT Kanpur) pp. 63, 1998.
28. . Sankar
Phase space distribution of the macroscopic superposition states
Proc. DAE-BRNS National Laser Symposium (Hyderabad Univ.) pp. 283, 1999.
29. S. Sankar
Pairing aspects of the macroscopic superposition states
Proc.DAE BRNS National Laser Symposium (Sri Chitra Thirunal Inst. Of Med. Sci. & Res.,Kerala University,Thiruvanathapuram) pp. 572, 2002
30. S. Selvakumar, K. Sivaji, N. Balamurugan, A. Arulchakaravarthy, C. Venkateswaran, S. Sankar, and P.Ramasamy
Growth of Naphthalene Single Crystals Using Selective Self Seeding Vertical Bridgman Technique (SSVBT)
DAE-SSPS, Jiwaji University, Gwalior, India, Dec. 46C, pp.99, 2003.
31. S. Sankar
On the time evolution of the pairing characteristics of the Macroscopic superposition states
Proc.DAE BRNS National Laser Symposium (Indian Institure of Technology, Kharagpur, pp. 477-478, 2003
32. S. Sankar, S. Chellammal, G. R. Subhashree, S. Selvakumar, E. Viswanathan, and K. Sivaji
Effect of capping agents on ZnS nanoparticles
DAE-SSPS, BARC, Mumbai, 48C, pp-336-337, 2005.